| PART |
Description |
Maker |
| UPD166019T1F UPD166019T1F-E1-AY |
Single P-Channel High-Side Intelligent Power Device
|
Renesas Electronics Corporation
|
| TPD4142K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4135K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4125AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4123AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K HZIP23-P-1.27F HZIP23-P-1.27G HZIP23-P-1. |
INTELLIGENT POWER DEVICE HIGH VOLTAGE MONOLITHIC SILICON POWER IC
|
Toshiba Semiconductor
|
| TPD4102K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC 东芝智能功率器件单片硅高压功率IC
|
Toshiba, Corp.
Toshiba Semiconductor
|
| UPD166023T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| TPD1028BS |
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS IC
Low-Side Switch for Motors, Solenoids, and Lamp Drivers
|
TOSHIBA[Toshiba Semiconductor]
|
| MIG100J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| DLX3416 |
Intelligent Display Device
|
OSRAM GmbH
|
